PART |
Description |
Maker |
HY5PS1G1631CLFP-Y5I HY5PS1G431CLFP-Y5I HY5PS1G1631 |
64M X 16 DDR DRAM, PBGA84 256M X 4 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
V59C1256804QALP19E V59C1256808QALP19E V59C1G01164Q |
32M X 8 DDR DRAM, BGA68 64M X 16 DDR DRAM, BGA92
|
PROMOS TECHNOLOGIES INC
|
MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 512Mb: x4, x8, x16 DDR SDRAM Features 128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
HYI18T256160BF-25F HYI18T256160BC-25F HYB18T256160 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84 GREEN, PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.4 ns, PBGA84 PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.45 ns, PBGA84 16M X 16 DDR DRAM, 0.5 ns, PBGA84 64M X 4 DDR DRAM, 0.45 ns, PBGA60
|
Qimonda AG
|
HYMD264G726DLF8N-D43 HYMD264G726DLF8N-J HYMD264G72 |
64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Registered DIMM 512MB
|
Hynix Semiconductor, Inc.
|
IS43DR16640A-3DBLI |
64M X 16 DDR DRAM, 0.45 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
HY5DU56422DF-D4 |
64M X 4 DDR DRAM, 0.65 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
MT47H64M4BG-37E |
64M X 4 DDR DRAM, 0.5 ns, PBGA84
|
|
NT5DS64M8DS-5T NT5DS64M8DS-6K |
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
HYS64D64300HU-6-B |
64M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
INFINEON TECHNOLOGIES AG
|
NT512D64SH8B0GN-75B |
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
NANYA TECHNOLOGY CORP
|
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
|